Sub-30 nm sample preparation and limited-angle STEM tomography H/F
CEA · Grenoble (38) · Stage
Publiée le 22 octobre 2026
Subject
Prepare sub-30-nm FIB lamellae and use limited-angle STEM tomography to reduce projection effects in nanoscale semiconductor devices.
Job description
As semiconductor devices become smaller and more complex, structural information from 2D STEM images becomes harder to interpret because projection effects and overlapping features through conventional FIB lamellae can obscure nanoscale structures.
The internship will improve both sample preparation and STEM characterization. Lamellae thinner than 30 nm will be prepared using FIB milling followed by low-energy argon-ion polishing.
Limited-angle electron tomography will then reconstruct the central slice of the FIB lamella to reduce projection effects. The results will be compared with a full 3D volume reconstructed using deep-learning approaches.
Applicant Profile
Master 2 in materials science, physics or equivalent, with programming skills.
Compétences
- ingénierie des matériaux
- physique
- rétro-ingénierie
- apprentissage profond
Voir l'offre d'origine et postuler · Source : site carrières de CEA